Our Typical Products…
Struktury epitaksjalne GaN na szafirze
| Produkt | Specyfikacja | Ilość | Kontakt |
|---|---|---|---|
| undoped GaN | GaN layer thickness up to 8um on sapphire |
1 | Order |
| n-type GaN | GaN layer thickness up to 8um on sapphire |
1 | Order |
| p-type GaN | GaN layer thickness up to 1.5um on sapphire |
1 | Order |
| semi-insulating GaN | GaN layer thickness up to 4um on sapphire |
1 | Order |
| HEMT structures | HEMT structure on sapphire |
1 | Order |
| LED structures | LED structure (390-450nm wavelength) on sapphire |
1 | Order |
| a-plane GaN | a-plane GaN on r-plane sapphire |
1 | Order |
Struktury epitaksjalne GaN na bulk GaN
| Produkt | Specyfikacja | Ilość | Kontakt |
|---|---|---|---|
| n-type GaN | GaN on bulk GaN |
1 | Order |
| p-type GaN | GaN on bulk GaN |
1 | Order |
| semi-insulating GaN | GaN on bulk GaN |
1 | Order |
| LED strutures | LED structures (390nm-450nm wavelength) on bulk GaN |
1 | Order |
| HEMT structures | HEMT structure on semi-insulating bulk GaN |
1 | Order |
Struktury epitaksjalne GaN na SiC
| Produkt | Specyfikacja | Ilość | Kontakt |
|---|---|---|---|
| n-type GaN | GaN on n-type or semi-insulating SiC |
1 | Order |
| p-type GaN | GaN on n-type or semi-insulating SiC |
1 | Order |
| semi-insulating GaN | GaN on n-type or semi-insulating SiC |
1 | Order |
Struktury epitaksjalne GaN na krzemie
| Produkt | Specyfikacja | Ilość | Kontakt |
|---|---|---|---|
| undoped GaN | up to 1.2um GaN on Silicon substrate (111) |
1 | Order |
Struktury epitaksjalne SiC na SiC
| Produkt | Specyfikacja | Ilość | Kontakt |
|---|---|---|---|
| n-type SiC on SiC | n-type SiC layer (doped with Nitrogen) |
1 | Order |
| p-type SiC on SiC | p-type SiC layer (doped with Aluminium) |
1 | Order |
| undoped SiC on SiC | undoped SiC layer |
1 | Order |
| Schottky diode | Schottky diode structure |
1 | Order |
| PIN diode | PIN diode structure |
1 | Order |
| JFET | JFET structure |
1 | Order |
| MISFET | MISFET structure |
1 | Order |
Struktury epitaksjalne AlN na SiC
| Produkt | Specyfikacja | Ilość | Kontakt |
|---|---|---|---|
| undoped AlN on SiC | undoped AlN on SiC |
1 | Order |
Struktury epitaksjalne grafenu na SiC
| Produkt | Specyfikacja | Ilość | Kontakt |
|---|---|---|---|
| Graphene | Graphene on n-type SiC |
1 | Order |
| Graphene | Graphene on semi-insuling SiC |
1 | Order |
Struktury epitaksjalne InAlGaAs na GaAs
| Produkt | Specyfikacja | Ilość | Kontakt |
|---|---|---|---|
| GaAs on GaAs | n-type, p-type and semi-insulating GaAs on GaAs |
1 | Order |
| InGaAsP/GaAs | InGaAsP/GaAs (typically latice-matched) |
1 | Order |
| AlAs/GaAs | AlAs/GaAs |
1 | Order |
| InAs/GaAs quantum dots | InAs/GaAs quantum dots |
1 | Order |
| GaAsP | GaAsP (typically strained) |
1 | Order |
| InGaAlP | InGaAlP (typically latice-matched) |
1 | Order |
| InGaP/GaAs | InGaP/GaAs (typically latice-matched) |
1 | Order |
| AlGaAs/GaAs QW | AlGaAs/GaAs QW edge emitting lasers (680 - 870nm) |
1 | Order |
| AlGaAs/GaAs VCSELs | AlGaAs/GaAs VCSELs |
1 | Order |
| AlGaAs/GaAs HEMTs | AlGaAs/GaAs HEMTs |
1 | Order |
| AlGaAs/GaAs varactors | AlGaAs/GaAs varactors |
1 | Order |
| GaAsP/GaAs lasers | GaAsP/GaAs strained QW edge emitting lasers |
1 | Order |
| InGaAsP/GaAs lasers | InGaAsP/GaAs QW lasers 808nm |
1 | Order |
| InGaAs/AlGaAs/GaAs lasers | InGaAs/AlGaAs/GaAs strained QW lasers 800-1000nm |
1 | Order |
| InGaAs/GaAs QD lasers | InGaAs/GaAs and InAs/GaAs QD lasers |
1 | Order |
| AlGaAs/GaAs waveguides | AlGaAs/GaAs passive waveguides |
1 | Order |
Struktury epitaksjalne InAlGaAsP na InP
| Produkt | Specyfikacja | Ilość | Kontakt |
|---|---|---|---|
| InP on InP | n-type, p-type and undoped InP on InP |
1 | Order |
| InGaAs/InP | InGaAs/InP (typically latice-matched) |
1 | Order |
| InGaAsP/InP | InGaAsP/InP passive devices |
1 | Order |
| InAlAs/InP | InAlAs/InP (typically latice-matched) |
1 | Order |
| InAlGaAs/InP | InAlGaAs/InP (typically latice-matched) |
1 | Order |
| InGaAsP/InP QW lasers | InGaAsP/InP QW edge emitting lasers and SOAs 1300-1600nm |
1 | Order |
| InGaAs/InP lasers 1550nm | InGaAs/InP edge emitting lasers 1550nm |
1 | Order |
| InGaAsP/InP VCSEL | InGaAsP/InP VCSEL structures |
1 | Order |
| InAlGaAs/InP VCSEL | InAlGaAs/InP edge emitting and VCSEL structures |
1 | Order |
| InGaAsP/InP | InGaAsP/InP (typically latice-matched) |
1 | Order |
| InP - based photodetectors | InP - based photodetectors |
1 | Order |
| InAlAs/InGaAs/InP HEMTs | InAlAs/InGaAs/InP HEMTs |
1 | Order |
Struktury epitaksjalne SL związków antymonkowych na podłożach GaSb (2")
| Produkt | Specyfikacja | Ilość | Kontakt |
|---|---|---|---|
| Type I GaSb/AlSb SL | Type I 4-10 ML GaSb / 4-10 ML AlSb on GaSb |
1 | Order |
| Type I GaSb/AlSb SL | Type I GaSb / AlSb SL on GaSb |
1 | Order |
| Type II InAs/GaSb SL | Type II InAs / GaSb SL on GaSb |
1 | Order |
| Type II InAs/AlSb SL | Type II InAs / AlSb SL on GaSb |
1 | Order |